金属基底上氧化物缓冲层的外延生长及表面形貌研究  

Epitaxial growth of oxide buffer layers on metal substrates by reactive sputtering

作　　者：邱文彬[1] 范峰[1] 赵荣[1] 李敏娟[1] 鲁玉明[1] 刘志勇[1] 蔡传兵[1] 

机构地区：[1]上海大学超导及应用技术研究中心,上海200444

出　　处：《低温与超导》2013年第3期44-48,共5页Cryogenics and Superconductivity

基　　金：国家自然科学基金(11174193);上海市科委(11dz1100302);国家"973"项目(2011CBA00105);国家"863"项目(2009AA03Z204)资助

摘　　要：采用直流反应磁控溅射在具有双轴织构的Ni-5%W基底上快速沉积了Y2O3种子层,随后外延生长GdxZr1-xOy(x=0.5,0.1)和YSZ三种阻挡层。研究表明,Y2O3能扩大和稳定后续薄膜的工艺窗口。X射线衍射(XRD)和原子力显微镜(AFM)分析结果表明,三种薄膜c轴织构良好、表面平整致密,其中GSZ(x=0.5)具有最好的面内织构和表面形貌,面内半高宽(FWHM)5.8°,均方根粗糙度(RMS)1.6 nm。Y203 seed layers were prepared on biaxially textured Ni- 5% W alloy substrates by DC magnetic reactive sputte- ring. Subsequently a series of RSZ（ R = Y, Gd） barrier layers were deposited on these Y2O3 - buffered substrates using the same system. The Y2 03 seed layers enhanced the barrier layers epi - grown evidently. All the buffer layers showed pure c - axis orien- tation with the full width half maximum （FWHM） of the φ - scan about 6°. The surface morphologies characterized by optical microscope（OM） and atomic force microscopy （AFM）were quite dense and crack- free with the root mean square （RMS） roughness less than 3 nm. In addition, the structure of GSZ （ x = O. 5 ）/Y2 03 showed a larger PH2O pressure ranges for bi - axial texture.

关 键 词：直流反应溅射 双轴织构 涂层导体 缓冲层 

分 类 号：TN304.054[电子电信—物理电子学]