40nm狗骨结构对n-MOSFET的性能影响  

Influence of 40 nm Dogbone Structure on the Performance of n-MOSFETs

作　　者：王磊[1] 周建伟[1] 

机构地区：[1]河北工业大学微电子与材料研究所,天津300130

出　　处：《半导体技术》2013年第3期203-206,共4页Semiconductor Technology

摘　　要：设计了一组测试结构用来探讨狗骨(dogbone)结构有源区对n-MOSFET性能的影响因素。测试结构和测量数据基于40 nm工艺技术,通过改变狗骨结构有源区的通孔区域到栅极之间的长度(S)来分析对NMOS器件参数如漏端饱和电流、阈值电压和漏电流的影响。实验表明,随着长度S从0.07μm增加到5.02μm,漏端饱和电流和漏电流均先上升后下降,而阈值电压呈单调下降变化趋势。漏端饱和电流和漏电流的趋势表明,狗骨结构有源区主要受到两个因素影响,即沿沟道长度方向的STI应力效应和源极/漏极电阻效应,而源极/漏极电阻效应对S较大的狗骨结构有源区影响更为显著。A group of test structures were produced and measured for discussing the impact of STI stress and source/drain resistance on characteristics of n-MOSFETs with the dogbone active-area layout. Based on the test structures and silicon measurement data done at 40 nm technology, the impact of varying length between the contacted active-area and gate （S） on the performance of n-MOSFETs dogbone devices was analyzed, such as the saturation drain current （Idst）, threshold voltage （ Vth ）, and leakage current （Ioff）. The experiments show that as the length between the contacted active area and gate （S） is increased from 0.07 μm to 5.02 μm, both Idea, and Ioff increase and then gradually decrease, while V,h has a monotonic decrease. The trend of Idsat and/off indicates that the dogbone device is mainly affected by two factors, i. e. STI stress in the direction of channel length and source/drain resistance, while the source/drain resistance effect is more pronounced with the larger S for dogbone NMOS transistors.

关 键 词：浅沟槽隔离 狗骨结构 源极 漏极电阻 器件性能 金属氧化物半导体场效应晶体管 

分 类 号：TN305[电子电信—物理电子学]