电磁干扰对CMOS传输门的影响  

Effect of electromagnetic interference on CMOS transmission gates

作　　者：陈杰[1] 杜正伟[1] 

机构地区：[1]清华大学电子工程系,微波与数字通信技术国家重点实验室,北京100084

出　　处：《清华大学学报（自然科学版）》2012年第12期1709-1714,共6页Journal of Tsinghua University(Science and Technology)

基　　金：国家自然科学基金面上项目(60971005)

摘　　要：电磁干扰对于电子设备的影响日益明显,因此对其干扰机理的研究至关重要。该文采用器件物理模拟的方法,利用自主开发的2维半导体器件-电路联合仿真器,研究了CMOS传输门在频率从1MHz到20GHz,功率从-2到24dBm电磁干扰作用下的响应。仿真结果表明:低频电磁干扰只要使得PMOS管或者NMOS管导通,电磁干扰就会在CMOS传输门断开的状态下通过;而高频电磁干扰则主要通过NMOS管的本征电容耦合到输出端,同时由于本征电容的旁路滤波作用受到一定的抑制。The threat posed by electromagnetic interference on electronic devices is quite significant. So the interference mechanism must be understood. Device simulations are used to study the effects of electromagnetic interference with power levels up to 24 dBm and frequencies between 1 MHz and 20 GHz on CMOS transmission gates using a two dimensional mixed-level circuit and semiconductor device simulator. The results show that if the PMOS or NMOS device channels in the CMOS transmission gate are formed in low frequency electromagnetic interference, then the electromagnetic interference can go through the CMOS transmission gate when it is off. Higher frequency electromagnetic interferences couples the output through the intrinsic capacitors of NMOS devices with suppression.

关 键 词：CMOS传输门 器件物理模拟 电磁干扰 

分 类 号：TN386.1[电子电信—物理电子学]