Ti薄膜在Si基底上的生长模拟  

The growth simulation of Ti thin film onto Si substrate

作　　者：吴清英[1] 陈小龙[2] 孙灵光[2] 罗顺忠[1] 朱建国[2] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [2]四川大学材料科学与工程学院,四川成都610064

出　　处：《功能材料》2013年第5期727-730,735,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50871106);中物院重点基金资助项目(2010A0301011)

摘　　要：利用三维动态蒙特卡洛模型模拟了Si基底上沉积Ti薄膜的初始期间的生长特性。模拟结果发现,在扩散截止步长为50的情况下,沉积温度和沉积速率对Ti薄膜初始生长模式和表面形貌有明显的影响。模拟结果表明,随着沉积温度的增加,Ti薄膜的初始晶核尺寸越来越大,数目越来越少,趋于岛状生长模式,同时Ti薄膜的相对密度越来越大,薄膜表面粗糙度也越来越小,即:较高的温度有利于Ti薄膜的岛状生长。随着沉积速率的增大,Ti薄膜表面越来越粗糙,相对密度也越来越小;较大的沉积速率不利于Ti薄膜的生长。The initial stage growth peculiarity of Ti thin film onto Si substrate was simulated by a three-dimen- sional kinetic Monte Carlo model. The simulation results show that the number of initial nucleus of Ti thin film decreased gradually with the increasing of deposition temperature, and the size of the Ti grains gets larger with the increasing of the deposition temperature when the diffusion cut-off step was 50. It was found that the sur- face root-mean-square roughness of Ti thin film was increased and the relative density of Ti film was decreased with the increasing of the deposition rate. Higher deposition temperature and lower deposition rate is beneficial to the growth of Ti thin film.

关 键 词：Ti薄膜 蒙特卡洛 模拟 表面形貌 

分 类 号：TG146.23[一般工业技术—材料科学与工程]