碱金属硒化物MHgSbSe_3(M=K,Rb,Cs)的晶体结构及其半导体性质的研究  

Crystal Structures and Semiconductor Properties of Alkline Metal Selenides MHgSbSe_3(M = K,Rb,Cs)

作　　者：陈震[1] 王如骥[2] 

机构地区：[1]福建师范大学实验中心,福州350007 [2]清华大学分析中心,北京100084

出　　处：《化学学报》2000年第3期326-331,共6页Acta Chimica Sinica

基　　金：福建省自然科学基金(A9910009)资助项目

摘　　要：用有机溶剂热生长技术(Solvthermal Technique)制备碱金属硒化物MHgSbSe_3(M=K,Rb,Cs),用单晶X射线衍射技术对其进行晶体结构分析.热分析结果表明,在常温(<200℃)下均为稳定的化合物.光学性质测试表明它们是半导体材料,KHgSbSe_3,RbHgSbSe_3,CsHgSbSe_3的禁带宽度依次为1.85eV,1.75eV,1.65eV.The solvothermal technique was used for the synthesis of MHgSbSe3 ( M = K, Kb,Cs) and the crystal structures were determined by single crystal X - ray diffraction methods.CsHgSbSe3( I ) crystallizes in the orthorhombic,space group Cmcm with a =0.4444(1)run, b = 1.5514 (6) nm, c = 1.1261 (7) nm, V = 0. 7764(6) nm3, Z = 4, R = 0.0605,wR =0.1234. RbHgSbSe3 ( II ) crystallizes in monoclinic, space group P21/c with a - 0.7758(2)nm, b = 1.1234(2)nm, c = 0.8849(2) nm,B=106.60(3) ,V = 0.7391(3)nm3,Z = 4,R = 0.0552,wR = 0.1198.KHgShSe3(III) crystallizes in the orthorhombic, space group Prma with a = 1.9482(4)nm, b = 0.8523(2)nm, c = 0.9830(2)nm, V = 1.6322(6)nm3, Z = 8, R = 0.077, wR = 0.118.The crystal structures of I and II consist of two dimensional layers of 2∞[ HgSbSe3 ]- with M + ( M = Kb, Cs) counter ions located between the layers, while that of IE consists of a three dimensional network with big channels (about 0.9nm×1.2nm) along the b direction, with K atoms located in the center of the channels. Optical studies performed on the powder sample of these compounds, suggested that they are the semiconductors with a band gap of 1.65eV for I , and 1.75eV for II and 1.85eV for III .

关 键 词：碱金属硒化物 晶体结构 无机多聚物 半导体性质 

分 类 号：O649[理学—物理化学]