预制层结构成分对溅射后硒化制备CIGS薄膜的影响  

Influence of Structure and Composition of Precursor Layer on CIGS Film Prepared by Sputtering and Post-selenization

作　　者：王卫兵[1] 刘平[2] 李伟[2] 马凤仓[2] 刘新宽[2] 何代华[2] 

机构地区：[1]上海理工大学机械工程学院,上海200093 [2]上海理工大学材料科学与工程学院,上海200093

出　　处：《材料导报》2013年第4期93-96,共4页Materials Reports

基　　金：上海市科技攻关项目(08110511600);上海市教委重点学科项目(J50503)

摘　　要：采用磁控溅射法制备了不同结构成分的铜铟镓(CIG)预制层,对预制层进行硒化得到铜铟镓硒(CIGS)薄膜。采用XRD、SEM及EDS研究了CIG预制层的结构成分对CIGS薄膜的组织与结构的影响。结果表明,不同结构成分的CIG预制层经过硒化后得到的CIGS薄膜中各元素的成分比例差别不大;采用Ga浓度相对较高的CuGa靶制备的两层结构的CIG预制层经硒化后生成的CIGS薄膜,其(112)面择优取向比较明显,晶粒尺寸相对较大。CIG precursor layers were deposited by magnetron sputtering and then selenized to fabricate CIGS thin films. Influence of structure and composition of precursor layer on structure and propertie of CIGS film was inves- tigated with the aid of X-ray diffraction, scanning electron microscopy, and energy dispersive spectrometer. The re- suits show that there is little difference among elemental compositions of CIGS films fabricated by selenization of CIG precursor layers with different structures and compositions. The CIGS film selenized from bilayer structured CIG pre- cursor deposited on CuGa target with relatively high Ga content exhibits an obvious preferred orientation on （112） sur- face and a larger grain size.

关 键 词：CIGS 磁控溅射 CIG预制层 

分 类 号：TM615[电气工程—电力系统及自动化]