基于微孔SiO_2栅介质的透明氧化物薄膜晶体管  

Transparent Oxide Thin Film Transistors Based on Microporous SiO2 Gate Dielectric

作　　者：颜钟惠[1] 王瑶[1] 吴国栋[1] 轩瑞杰[1] 李想[1] 

机构地区：[1]湖南大学微纳光电子器件及应用教育部重点实验室,长沙410082

出　　处：《材料导报》2013年第6期33-36,共4页Materials Reports

基　　金：国家自然科学基金(11104288);宁波市自然科学基金(2011A610202)

摘　　要：采用等离子增强化学气相沉积(PECVD)法制备微孔SiO2薄膜并将其作为栅介质,制作了基于微孔SiO2栅介质层的透明氧化物薄膜晶体管。利用场发射扫描电镜、阻抗分析仪以及半导体分析仪对样品进行表征。结果表明,微孔SiO2栅介质具有双电层效应,这种微孔SiO2栅介质透明氧化物薄膜晶体管器件具有工作电压低,开关电流比大,透光性高,稳定性强等良好性能。Using microporous SiO2 film deposited by plasma enhanced chemical vapor deposition （PECVD） as the gate dielectric, transparent oxide thin film transistors were prepared. The samples were characterized by field emission scanning electron microscopy （FESEM）, impedance analyzer, and semiconductor parameter analyzer. The results exhibit that the microporous SiO2 gate dielectric has a large electric-double-layer effect, and the thin film tran- sistors show a good performance with an ultralow operating voltage, a large on-off ratio. What more, light transmit- tance and stability of the thin film transistors are also excellent.

关 键 词：微孔SiO2 双电层效应 透明氧化物 薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学]