透射式变掺杂GaAs光电阴极研究  

Transmission-mode varied-doping GaAs photocathode

作　　者：陈怀林[1] 常本康[1] 牛军[1] 张俊举[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《应用光学》2013年第2期230-234,共5页Journal of Applied Optics

基　　金：国家自然科学基金资助课题(60801036)

摘　　要：为了将变掺杂GaAs材料应用于微光像增强器,开展了透射式变掺杂GaAs光电阴极实验研究,制备了2种反转结构透射式变掺杂GaAs光电阴极。测试了玻璃粘接前后GaAs光电阴极载流子浓度变化,发现高温粘接后载流子浓度增加现象。通过测试高温激活的透射式变掺杂GaAs光电阴极发现,在450nm～550nm波段内,变掺杂GaAs光电阴极仍然具有较高的光谱响应。In order to apply varied-doping GaAs material to low-light-level image intensifier, the transmission-mode varied-doping GaAs photocathode experiment was carried out and the trans- mission-mode varied-doping GaAs photocathodes with two inversion structures were prepared. By testing the carrier concentration change of the GaAs photocathode before and after glass bonding, it is found that the carrier concentration increases after bonding at a high tempera- ture. Moreover, by testing the transmission-mode varied-doping GaAs photocathode of high- temperature activation, result shows that the varied-doping GaAs photocathode still has a high spectral response in the band of 450 nm-550 nm.

关 键 词：GAAS光电阴极 变掺杂 光谱响应 透射式 

分 类 号：TN214[电子电信—物理电子学]