铝诱导对磁控溅射制备CdZnTe薄膜结晶的影响  

Research on crystallization of CdZnTe film by Al-induced crystallization

作　　者：潘松海[1] 周海[2] 曾冬梅[2] 

机构地区：[1]北京化工大学材料科学与工程学院,北京100029 [2]北京石油化工学院材料科学与工程系,北京102617

出　　处：《功能材料》2013年第6期862-865,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51002012)

摘　　要：选用Cd0.9Zn0.1Te晶体和纯度为99.999%的铝为靶材,结合Al诱导晶化技术,采用磁控溅射法在普通玻璃衬底上制备了CdZnTe薄膜。研究了铝诱导CdZnTe薄膜的结构和形核机理。研究表明,铝诱导的CZT薄膜为闪锌矿结构,且为(111)晶面的取向生长;在薄膜生长过程中,覆盖在CdZnTe表面的铝首先与ZnTe结合,形成了ZnAl2Te4相,并以此为核心,诱导CdZnTe异质形核结晶,重新形成了小晶粒团簇的较致密颗粒状薄膜,提高了薄膜(111)面的优势取向结晶,提高了CdZnTe薄膜的结晶质量。讨论了薄膜的光学性能。Using Cd0.9Zn0.1Te crystal and aluminum （purity of 99. 999%） as target, with magnetron sputtering method, we prepared CdZnTe film on the glass by aluminum induced crystallization. We studied the structure and the nucleation mechanism of CdZnTe film by A1C. Studies have shown that the structure of aluminum-in- duced CdZnTe film is zinc blende structure with oriented growth of the （111） crystal surface. We found that aluminum covered on the surface of the CdZnTe film firstly reacted with the ZnTe phase, and then formed ZnA12Te4 phase as a core which promoted the film recrystallization of the clusters of small grains. In addition, aluminum-induced greatly enhanced the advantages of oriented crystallization of （111） crystal surface, and the crystalline quality has been greatly improved. In this paper, we also studied the optical properties of the films.

关 键 词：CdZnTe薄膜 铝诱导 磁控溅射 形核机理 光学性能 

分 类 号：TN304.26[电子电信—物理电子学]