溅射时间对Mo薄膜结晶取向的影响  

The influence of the preferred orientation of Mo thin films on the sputtering time

作　　者：张艳霞[1] 冀亚欣[1] 欧玉峰[1] 闫勇[1] 李莎莎[1] 刘连[1] 张勇[1] 赵勇[1,2] 余洲[1] 

机构地区：[1]西南交通大学磁浮技术与磁浮列车教育部重点实验室,四川成都610031 [2]新南威尔士大学材料科学与工程学院

出　　处：《功能材料》2013年第6期888-892,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50588201;50872116;51271155);国际热核聚变实验堆(ITER)计划专项资助项目(2011GB112001);四川省基金资助项目(2011JY0031;2011JY0130);中央高校基本科研业务费专项资金资助项目(SWJTU12CX016;SWJTU11ZT16;SWJTU11ZT31)

摘　　要：采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,并用XRD、SEM、四探针等对薄膜进行表征,研究了沉积时间对薄膜晶体结构、表面形貌以及电学性能的影响。研究发现,沉积时间能够调节Mo薄膜的择优取向。溅射时间较短(5～10min)时,沉积的Mo薄膜呈(110)择优取向。溅射时间超过15min后,薄膜呈现(211)取向,且(211)晶面择优程度随沉积时间的增加而提高。随着择优取向的改变,薄膜的表面形貌由三角形颗粒变为长条形颗粒,电阻率也发生相应变化,由3.92×10-5Ω·cm增加到4.27×10-5Ω·cm再降低,对应薄膜生长的晶带模型由晶带T型组织变为晶带2组织。In this paper, molybdenum （Mo） thin films have been deposited on soda-lime glass substrates using DC magnetron sputtering method and were characterized by XRD, SEM and four-probe instrument. The results show that the crystal structure, surface morphology and electrical properties of Mo thin films were affected by the deposition time. The films deposited at short time are preferentially oriented along （110） plane, and films deposited beyond 15min show （211） preferred orientation. With the increase of deposition time, the crystallo- graphic orientation of Mo thin films transforms from （110） plane to （211） plane. Surface morphology of the films changes form triangular particles to rectangles particles, resulting from the crystallographic orientation transformation. Accordingly, the electrical resistivity of films also change from 3.92 × 10^-5Ω· cm to 4.27 × 10 ^-5Ω·cm. The corresponding growth model of the Mo films change from Thorton＇s zone model to texture to crystal zone 2 structure.

关 键 词：直流磁控溅射 择优取向 晶带模型 电性能 

分 类 号：TB43[一般工业技术]