深槽刻蚀工艺中lag效应的研究(英文)  

Investigation of the Lag Effect in the Deep Trench Etching Process

作　　者：宋运康[1] 滕霖[1] 熊恒[1] 

机构地区：[1]西安飞行自动控制研究所,西安710065

出　　处：《微纳电子技术》2013年第3期177-183,共7页Micronanoelectronic Technology

基　　金：International Cooperation in Science and Technology(2011DFA72370);National High Technology Research and Development Program(863Program)(2011AA110102)

摘　　要：等离子体深刻蚀技术是MEMS制备的关键,利用该技术进行刻蚀时,会出现lag效应和反常lag效应,严重影响器件的性能。为了消除lag效应,建立刻蚀和钝化模型分析lag的产生,并利用ARDE表征lag。采用"四因子-三水平"的正交实验研究不同工艺参数对lag的影响,得到工艺参数影响lag的优先级:线圈功率和极板功率对lag产生影响最大,与此同时得到一组最优的实验参数。在低线圈功率和低极板功率条件下,研究了改变压强和气体流量对lag的影响,增加压强和气体流量都会减小lag。最终通过优化工艺参数得到了反常lag结构和lag消除的刻蚀结构。The deep reactive ion etching（DRIE） technology is the key technology in the micro-electromechanical system（MEMS） fabrication.The phenomena of lag effect and inverse lag effect can occur when this technology is used to etch,which will affect the performance of the device greatly.A model of etching and deposition was set up to illuminate the lag phenomenon,and the aspect-ratio-dependent etching（ARDE） was also used to characterize the lag effect.Four factors-three levels orthogonal experiment was used to study the effect of different process parameters on the lag,and the priority of the process parameters to influence the etching process was acquired.The low coil power and the low plate power are the key parameters which influence the lag most,and a set of optimal experimental parameters was obtained.The effect of the pressure and flow rate on the lag at the low coil and plate powers was also investigated.When the pressure and flow rate increase,the lag can be lessened.Finally,the inverse lag and lag free etched structures with a vertical profile were achieved by optimizing the process parameters.

关 键 词：等离子体深刻蚀(DRIE) 微电子机械系统(MEMS) lag效应 反常lag效应 平衡模型 正交实验 

分 类 号：TH703[机械工程—仪器科学与技术] TN305.7[机械工程—精密仪器及机械]