红外接收用PIN硅光电探测器研究  

Study of PIN Structure Silicon Photo-detector for IR Control

作　　者：张明[1] 费诵秋[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2013年第2期37-40,共4页Electronics & Packaging

摘　　要：PN二极管是一种常用的光电探测器,其中PIN光电二极管因其体积小、噪声低、响应速度快、光谱响应性能好等特点已作为一个标准件广泛应用于红外遥控接收领域。文章基于半导体材料的光吸收特性和光电效率转换原理,同时结合减反射膜理论,对PIN光电二极管进行研究,通过衬底材料的合理选择,对减反射膜折射率及厚度进行对比实验,验证了SiN膜层较SiO2膜有着更为良好的减反射效果,可以有效提升光敏器件的光电转换效率,同条件下器件的光生电流得到提升,为今后光电器件的生产、开发应用提供了参考。PN photodiode is a normally photo-detector. Because of low small valume, low noise and quickly response. Silicon PIN photo-diode has become a standard component used for infrared remote control chip. This paper studied the Silicon PIN structure photodiode,based on Semicon photo electricity transfer and Anti- Reflective film theory, Chose the appropriate Silicon wafer and compared with film thickness and Refractive index, optimized the process to improve the Responsivity and photocurrent. Silicon Nitride has better anti- reflective performance than Oxide film. Using Silicon Nitride film can improve photo electricity transfer efficiency and light current. The paper provides the guidelines for manufacture and exploitation in future.

关 键 词：PIN光电二极管 响应度 光吸收 抗反射膜 

分 类 号：TN312.4[电子电信—物理电子学]