铁氧体-硅双层基片微带线的谱域导抗法分析  

Analysis of Dispersion Characteristic of Microstrip Lines on Ferrite & Silicon Structures with Spectral-Domain Method

作　　者：郑雨薇[1] 吕坤颐[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《电子质量》2013年第3期5-8,共4页Electronics Quality

摘　　要：该文提出两种铁氧体-硅双层基片的微带线结构,并通过对麦克斯韦方程的坐标旋转和傅里叶变换导出波导纳,用谱域导抗法进行特性分析。尤其是对微带线的色散特性进行了计算,讨论了微带线各种参数对色散特性的影响,并对它们的特性进行了对比,发现其中一种结构的色散受各因素的影响很小,尤其是介质的工艺尺度,可用于更高集成电路的制造中。This paper present two microstrip line structure with ferrite ＆ silicon configurations as a sub-strate,and work out the wave conductance by rotating the coordinates of Maxwell＇s equations and using Fourier transform,analyze the characteristics through Spectral-Domain method,Then,calculate this kind of microstrip line＇s dispersion characteristics,and discuss parameters＇ effect,and contrast their characteris-tics,Found that a structure＇s dispersion has little with factors,especially technology,and it can be used in the manufacture of integrated circuits higher.

关 键 词：微带 铁氧体 谱域导抗法 色散 

分 类 号：TN817[电子电信—信息与通信工程]