半导体(Ga-Al-As)激光对大鼠牙髓组织的生物学效应  

Biological effects of Ga-Al-As semiconductor laser on rat pulp tissues

作　　者：程庚[1] 程小刚[1] 白玉[1] 康婷[1] 李明伟[1] 李鹏[1] 李丹[1] 赵春苗[1] 张晓[1] 余擎[1] 

机构地区：[1]第四军医大学口腔医学院,陕西西安710032

出　　处：《牙体牙髓牙周病学杂志》2013年第3期191-194,共4页Chinese Journal of Conservative Dentistry

摘　　要：目的:观察镓铝砷(Ga-Al-As)半导体激光在最大脱敏功率下对大鼠牙髓组织的生物学效应。方法:7周龄SD大鼠6只按观察时间随机分为3组,分别用Ga-Al-As半导体激光以推荐的最大功率(1.0 W),对每只大鼠右侧上切牙进行照射,照射参数为180 s,500 ms,左侧上颌切牙不作处理作为对照组。分别于激光照射后1、7、14 d取各牙牙髓组织,用实时定量PCR(RT-PCR)检测炎症相关因子TNF-α、矿化相关基因DMP1的表达情况,采用方差分析对数据进行统计分析。结果:激光照射后第1天时,牙髓组织内TNF-αmRNA表达水平出现上升,随后逐渐下降,到第14天时,其表达水平与对照组接近,各时间点与对照组相比均无统计学差异(P>0.05);而DMP1 mRNA的表达则随时间呈上升趋势,并在照射后第14天时有较高表达,与对照组和1 d组相比均有统计学差异(P<0.05)。结论:在1.0 W,180 s,500 ms能量的激光照射下,大鼠牙髓组织未出现不可逆的炎症改变,而且可激活其矿化修复功能。AIM： To study the effects of Ga-Al-As semiconductor laser irradiation on rat dental pulp tis-sues. METHODS ： The right upper incisors of 67 - week - old SD rats were irradiated by Ga-Al-AS semiconductor la-ser at 1.0 W, 500 ms for 180 s. The left upper incisors were untreated and served as the controls. 2 rats were sacri-ficed randomly at 1,7, and 14 d after laser irradiation. Dental pulp was taken out, mRNA was extracted and the gene expression of TNFPot and dentin matrix protein 1 （ DMP1 ） was examined by real-time RT-PCR. RESULTS ： TNF- α mRNA expression increased l d after laser irradiation （P 〉 0.05 ）, however, its expression was almost the same as that in the control group 7 and 14 d after laser irradiation. Laser irradiation time - dependently increased DMP 1 mRNA expression and significant increase of DMP1 expression was observed 14 d （P 〈 0.05 ） after irridiation. CONCLU-SION： Ga-Al-AS laser irradiation at 1.0 W, 500 ms for 180 s may not result in irreversible inflammation in rat dental pulp tissues . On the contrary, pulp mineralization may be activated.

关 键 词：半导体激光激光 半导体 牙本质过敏 肿瘤坏死因子α 牙本质基质蛋白1 

分 类 号：R780.2[医药卫生—口腔医学]