纳米锗镶嵌二氧化硅薄膜的光学性质及其应用的研究  

Investigation on Optical Properties and Application of nc-Ge/SiO_2 Film

作　　者：林正怀[1] 张培[1] 王加贤[1] 

机构地区：[1]华侨大学信息科学与工程学院,福建厦门361021

出　　处：《量子光学学报》2012年第4期377-381,共5页Journal of Quantum Optics

基　　金：福建省自然科学基金(2012J01277);福建省青年科技人才创新项目(2001J030)

摘　　要：采用射频磁控溅射技术与热退火处理制备了纳米锗镶嵌二氧化硅(nc-Ge/SiO2)复合薄膜。对薄膜的光吸收谱进行分析,得到了纳米Ge晶粒的光学带隙。单光束Z-扫描的实验结果表明薄膜具有较强的可饱和吸收特性。将薄膜作为可饱和吸收体插入LD端面抽运的Nd:YVO4激光器内,分别实现1 342nm和1 064nm激光的被动调Q,得到脉宽分别为29ns和22ns的脉冲序列。理论分析认为,纳米Ge晶粒形成的界面态和缺陷态对1 342nm激光产生的饱和吸收作用,是导致被动调Q的主要原因。By ratio-frequency （RF） magnetron sputtering technique and thermal annealing, the nanometer Ge mosaic SiO2 （nc-Ge/SiO2） composite films have been prepared. The optical analysed, obtained the optical band gap. Single beam Z-scan of the experimental films have a feature of strong saturable absorption. As a saturable absorber into YVO4 lasers, 1 342 nm and 1 064 nm laser passively Q-switched are achieved, absorption of the films is results show that the the the LD end pumped Nd. got the pulse width are 29 ns and 22 ns pulse sequence, respectively. Theoretical analysis shows that the formation of interface states and defect states in nc-Ge/SiO2, which have a saturable absorption effect for 1 342 nm laser, are the main reason for passively Q-switched operation.

关 键 词：nc-Ge SIO2薄膜 磁控溅射技术 非线性吸收 被动调Q 

分 类 号：O431[机械工程—光学工程]