基于实频技术的超宽带GaN功率放大器研究  

Ultra-wide Band GaN Power Amplifier Based on Real Frequency Technique

作　　者：张麟兮[1] 张曼[1] 

机构地区：[1]西北工业大学电子信息学院,陕西西安710129

出　　处：《电视技术》2013年第7期50-52,78,共4页Video Engineering

基　　金：西北工业大学研究生创业种子基金项目(z2012073)

摘　　要：针对Lange耦合器在超宽带功率放大器中的应用,设计了一款基于实频技术的超宽带GaN功率放大器。匹配网络采用微带结构,应用微波CAD软件对所设计的电路进行仿真和优化,工作带宽为2～4 GHz,放大器增益大于26 dB,增益平坦度±0.3 dB,输出功率达到40 dBm,PAE大于25%。使用相对介电常数为3.38、厚度为0.508 mm的介质基板实现该放大器,可广泛应用于通信领域。According to the Lange-Coupler using in ultra wideband power amplifier, a broadband GaN power amplifier is designed based on the real frequency technique. And the matching network is micro strip structure. The circuit is simulated and optimized by microwave CAD. The measurement shows that the amplifier has good performance,the whole operating frequency range is from 2 GHz to 4 GHz, gain more is than 26 dB, gain flatness is bet- ter than ＋0.3 dB, output power is up to 40 dBm, the power efficiency is higher than 25%. It can be achieved using the substrate whose relative dielec- tric constant is 3.38 and thickness 0.508 mm.

关 键 词：超宽带 实频技术 LANGE耦合器 GAN 

分 类 号：TN722.7[电子电信—电路与系统]