SiC纳米线的合成与表征  

Synthesis and Characterization of SiC Nanowires

作　　者：乔小晶[1] 李妍[1] 李旺昌[1] 任庆国[1] 

机构地区：[1]北京理工大学爆炸科学与技术国家重点实验室,北京100081

出　　处：《北京工业大学学报》2013年第4期599-603,共5页Journal of Beijing University of Technology

基　　金：国家部委项目(51305120302)

摘　　要：以葡萄糖、硅粉为原料,采用水热法与焙烧结合成功地制备出一维SiC-SiO2纳米线,与常规SiC纳米线的制备方法相比,该法焙烧温度低,操作简单.运用红外特征光谱、扫描电子显微镜、X射线粉末衍射、原子力显微镜(atomic force microscope,AFM)对其研究.结果表明:所制得的纳米线为SiC-SiO2复合的核-壳结构,SiC纳米线的外层均匀地包覆上了一薄层SiO2.纳米线长度几到几十微米不等,直径200 nm左右,球形纳米颗粒生长在纳米线上,这些球形颗粒为碳化硅和无定形硅氧化物.根据试验结果,分析了该方法制备SiC纳米线的生长机理为气-液-固反应.SiC-SiO2 nanowires are synthesized by hydro-thermal and calcination methods using glucose and silicon. SiC nanowires can be synthesized at lower temperature more easily, compared with other methods. The morphology and structure of the nanowires were characterized by FTIR spectra, scanning electron micrograph（SEM） , X-ray diffraction （XRD） , and atomic force microscope （ AFM ）. The SiC nanowires are wrapped with a uniform layer shell of SiO2 and the structure of the nanowires is SiC-SiO2 core-shell structure. The diameter of the nanowires is about 200 nm and length up to several microns. Spheres consisted of SiC and SiO2 coexist in the nanowires. The SiC nanowires are formed by multiple vapor-liquid-solid （VLS） mechanism.

关 键 词：纳米线 碳化硅 葡萄糖 水热法 焙烧 

分 类 号：TB332[一般工业技术—材料科学与工程]