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作 者:李晶[1] 史玲玲[2] 艾红军[1] 徐坚[2] 孙伟[1] 钟鸣[3]
机构地区:[1]辽宁省口腔医学研究所,中国医科大学附属口腔医学院修复科,沈阳110002 [2]中国科学院沈阳金属研究所非晶合金组,沈阳110016 [3]中国医科大学附属口腔医学院中心实验室,沈阳110002
出 处:《中国医科大学学报》2013年第3期257-261,共5页Journal of China Medical University
基 金:辽宁省科技计划资助项目(2011225020);辽宁省教育厅高校科研计划(L2010644);沈阳市科技计划资助项目(F12-193-9-10)
摘 要:目的 3(-4,5-二甲基噻唑-2)-2,5-二苯基四氮唑溴盐(MTT)法体外评价CPTi和Ti-6Al-4V牙科种植体材料对人脐静脉血管内皮细胞(HU)增殖的影响,并检测这两种材料在细胞培养液中的腐蚀情况。方法将HU(2×104/mL)接种于CPTi和Ti-6Al-4V金属表面,电镜观察细胞接种初期的形态,MTT法检测细胞接种后4 h、1 d、2 d、3 d、7 d、10 d和14 d所测的OD值,X射线光电子能谱分析(XPS)法分析2种金属在细胞培养液浸泡前后的表面层组元。结果采用SPSS13.0软件分析,细胞接种后4 h、1 d、2 d、3 d、7 d、10 d和14 d所测的OD值表明2种材料没有统计学差异(P<0.05);接种后6 h电镜下可以观察到细胞在CPTi和Ti-6Al-4V表面的形态基本类似,没有明显的形态和数量差别出现;XPS结果显示2种合金表面都有不同厚度的钝化膜形成,CPTi表面的钝化膜要比Ti-6Al-4V的厚一些。结论 CPTi和Ti-6Al-4V对HU的增殖没有影响,在培养基中也没有发生腐蚀。Objective To evaluate the effects of two commonly used dental implant materials-CPTi and Ti-6Al-4V on human umbilical vein endothelial cell (HU) proliferation, and detect the corrosion of these two materials in the cell culture medium. Methods HU cells were seeded on CPTi and Ti-6Al-4V surface at a density of 2-104/mL. SEM photos were taken for early adhesion stage;MTT assay was used to detect cytotoxicity at 4 h, 1 d,2 d,3 d,7 d, 10 d and 14 d after seeding;XPS analysis was performed to compare the surface before and after cell incubation. Results All statistical analysis was performed using SPSS13.0 software package,there was no difference between the HU on CPTi and Ti-6Al-4V (P 〈 0.05)base on the OD values measured after seeding at different time points. SEM photos were taken for HU after 6 h inoculation on CPTi and Ti-6Al-4V materials, which showed no obvious change of morphology and number. XPS results showed that different thickness of passivation films were formed on the surface of both two alloys,while the CPTi was slightly thicker than that of Ti- 6Al-4V. Conclusion There was no difference of in vitro cytotoxicity between CPTi and Ti-6Al-4V materials for HU, and no corrosion was observed in the medium.
关 键 词:CPTI TI-6AL-4V 3(-4 5-二甲基噻唑-2)-2 5-二苯基四氮唑溴盐 X射线光电子能谱分析
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