RSD关断时间检测方法的改进研究  

The Improvement Study of Detection Method of RSD's Turn off Time

作　　者：汪恺[1] 梁琳[1] 余岳辉[1] 

机构地区：[1]华中科技大学光学与电子信息学院,湖北武汉430074

出　　处：《通信电源技术》2013年第2期1-5,共5页Telecom Power Technology

基　　金：国家自然科学基金资助项目(50907025);中央高校基本科研资助;HUST:2012QN150

摘　　要：在脉冲功率的重频应用中,开关的关断特性是至关重要的,其关断时间直接决定了可以获得的最高重复频率。文中通过软件仿真分析了影响反向开关晶体管RSD(reversely switched dynistor)关断时间的因素,同时为了更准确地测得RSD的关断时间,在对其关断时间检测电路原理研究的基础上,提出了一种采用IGBT代替晶闸管(Thyristor)作为预充回路开关的改进测量方法。仿真结果表明RSD的关断时间随着器件少子寿命、主电流下降率dI/dt和工作电压的增大而增大。实验测得了正向阻断电压为2 000 V的RSD在IGBT开通时间分别为20μs、40μs和50μs下的电压电流波形及关断时间。The turn-off characteristics of a switch is very important in frequency application of pulsed power technology, and the tum-off time directly determines the highest frequency which we can get. In this study, in order to accurately measure the turn- off time of RSD （reversely switched dynistor）. The influence factors of turn off time combined with simulation software are ana- lyzed. An improved measuring method that takes IGBT for the switch of pre-eharging loop instead of thyristor （Thyristor） is put forward. The simulation result shows that the minority carrier lifetime.dI/dt and working voltage have a positive correlation rela- tionship with turn off time The experiment measures the voltage and current waveform and turn off time of RSD of which forward blocking voltage is 2 000 V when the turn-on time of IGBT is 20 μs.40 μs and 50 μs.

关 键 词：脉冲功率 反向开关晶体管 关断时间 

分 类 号：TN323.6[电子电信—物理电子学]