阳极端点支撑空气桥结构太赫兹GaAs二极管  

THz GaAs Schottky Diodes with Point Support Airbridye Structure

作　　者：邢东[1] 冯志红[1] 王俊龙[1] 张士祖 梁士雄[1] 张立森[1] 宋旭波[1] 蔡树军[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2013年第4期279-282,共4页Semiconductor Technology

摘　　要：研发了具有阳极端点支撑悬浮空气桥结构的太赫兹GaAs肖特基二极管工艺制作技术。该制作技术可以大幅降低GaAs肖特基二极管的寄生电容。利用此项技术,制作出了具有极小寄生电容和串联电阻的太赫兹GaAs肖特基二极管。GaAs肖特基二极管芯片采用了小尺寸芯片设计,芯片厚度为25μm、芯片长度为175μm、芯片宽度为55μm,其中单阳极GaAs肖特基二极管的结电容小于4 fF,串联电阻小于5Ω,总电容的典型值为7～8 fF。根据GaAs肖特基二极管的总电容(CT)计算,二极管的截止频率(fc)高达3.9 THz。这种GaAs肖特基二极管适合应用在太赫兹频段上。A quasi-whisker contacted anode structure by a metal finger akin to an air bridge and its fabrication technology for GaAs schottky diodes were developed. Using this technology, a quasi-whisker contacted device structure was developed and parasitic capacitance of diodes was consumedly reduced. The fabricating THz GaAs shcottky diodes with very low parasitic capacitance and series resistance was succeed . The small dimension of GaAs shcottky diode chips was designed. The diode chip size is 25 μm × 175 μm × 55 μm. The results shows that the single anode diode junction capacitance is smaller than 4 fF, series resistance is smaller than 5 Ω, and the total capacitance is typically 7-8 fF. Using the total capacitance （CT） of a single anode diode to calculate, THz quasi-whisker contacted GaAs schottky diodes exhibited a cut off frequency （fo） of above 3.9 THz. The GaAs schottky diodes are suitable for THz-frequency operation.

关 键 词：太赫兹 GaAs肖特基二极管 悬浮空气桥 寄生电容 串联电阻 

分 类 号：TN315.3[电子电信—物理电子学]