高性能GaAs微波单片集成电路负阻压控带通有源滤波器  

High Performance GaAs Microwave Monolithic Integrated Circuit Negative Resistance Voltage-Controlled Active Bandpass Filter

作　　者：田彤[1] 罗晋生[2] 吴顺君[1] 

机构地区：[1]西安电子科技大学,西安710071 [2]西安交通大学

出　　处：《西安交通大学学报》2000年第8期46-50,共5页Journal of Xi'an Jiaotong University

基　　金：国家自然科学基金资助项目! (69571 0 2 4 )

摘　　要：在前期对GaAs微波单片集成电路负阻压控带通有源滤波器进行理论及实验研究的基础上 ,针对国内工艺技术的特点 ,提出了提高其性能的电路结构及其设计技术 .该设计采用宽带放大器级联负阻压控带通有源滤波器 ,在输入端设计π型宽带匹配电路 ,并采用经实验验证和优化设计的平面压控变容管 .模拟结果表明 ,该压控带通滤波器性能优越 ,有 1 0dB以上插入增益 ,通带宽度约 30MHz ,调频范围宽约 4 0 0MHz ,工作于 1 .4 4～ 1 .82GHz.An optimization design algorithm is presented for improving the performance of GaAs MMIC (microwave monolithic integrated circuit) negative resistance voltage controlled active bandpass filter. Wideband amplifier is used in series with negative resistance voltage controlled active bandpass filter. A pi type wideband matching circuit is employed at input terminal to ensure the wideband matching of the amplifier. The filter is structured by two nodes Butterworth filter with negative network in resonator. An experiment verified planar varacter is also employed. A planar spiral inductor is adopted, together with a 0.8 micrometer MESFET parameter model in circuit simulation. The filter has an outstanding performance of 30 MHz passband width, about 400 MHz frequency tuning range, a 1.44～1.82 GHz operating band and a 10 dB average insertion gain.

关 键 词：负阻 压控 有源滤波器 微波单片集成电路 砷化镓 

分 类 号：TN713.8[电子电信—电路与系统] TN713.5