^(60)Coγ射线对高铝组分Al_(0.5)Ga_(0.5)N基p-i-n日盲型光探测器理想因子的影响  

^(60)Coγ-radiation effects on the ideality factor of Al_x Ga_(1-x)N p-i-n solar-blind detector with high content of aluminum

作　　者：张孝富[1,2] 李豫东[1,2] 郭旗[1,2] 罗木昌[3] 何承发[1,2] 于新[1,2] 申志辉[3] 张兴尧[1,2] 邓伟[1,2] 吴正新[1,2] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]重庆光电技术研究所,重庆400060

出　　处：《物理学报》2013年第7期323-328,共6页Acta Physica Sinica

摘　　要：采用60Coγ射线源对高铝组分Al0.5Ga0.5N盲紫外p-i-n结构光探测器和Si基可见光p-i-n结构探测器进行了累计剂量分别为0.1,1,10Mrad(Si)总剂量辐照实验.实验发现,随着辐照剂量的增加,AlGaN盲紫外p-i-n结构光探测器的理想因子显著增大,辐照后理想因子n>2;而Si基可见光p-i-n结构探测器的理想因子随辐照剂量的变化并不明显.AlGaN盲紫外p-i-n结构光探测器理想因子的退化可能主要是因为欧姆接触性能的退化,Si基可见光p-i-n结构探测器的理想因子的变化则可能是由于敏感层的退化.High Al content AlxGa1-xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Co γ-rays up to 0.1, 1, 10 Mrad（Si）. With the increase of total radiation dose, the ideality factor of AlxGa1-xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad（Si）; the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad（Si）. The degradation of AlxGa1-xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.

关 键 词：高铝组分AlxGa1-xN γ射线辐射效应 理想因子 欧姆接触 

分 类 号：O571.33[理学—粒子物理与原子核物理] TN23[理学—物理]