杂质Si对InAs自组织量子点均匀性的影响  

THE EFFECT OF DOPANT SI ON THE UNIFORMITY OF SELF-ORGANIZED InAs QUANTUM DOTS

作　　者：王海龙[1] 朱海军[1] 李晴[1] 宁东 汪辉[1] 王晓东[1] 邓元明[1] 封松林[1] 

机构地区：[1]中国科学院半导体所半导体超晶格国家重点实验室,北京100083

出　　处：《红外与毫米波学报》1999年第6期423-426,共4页Journal of Infrared and Millimeter Waves

基　　金：国家攀登计划;国家自然科学基金!(编号:19823001)

摘　　要：研究了较低掺杂浓度时InAs量子点中直接掺杂Si对其发光特性的影响.光致发光谱(PL)的测量表明,与未掺杂样品相比,掺杂样品发光峰稍微蓝移,同时伴随着发光峰谱线明显变窄.该结果表明,在生长InAs层时直接掺杂,有利于形成大小分布更均匀的小量子点.该研究对InAs自组织量子点在器件应用方面有一定的意义.The photoluminescence in directly si doped self organized InAs quantum dots was systematically studied. With doping, a decrease in linewidth and a little blue shift in peak were observed by PL measurement. The results show that direct doping when growing InAs layer may be helpful to the formation of uniform small quantum dots. The work will be meaningful for the fabrication of self organized InAs quantum dots semiconductor device.

关 键 词：自组织量子点 硅 杂质 砷化锢 均匀性 

分 类 号：TN304.23[电子电信—物理电子学]