纳米硅薄膜的量子特征及其应用前景  

QUANTUM BEHAVIOR AND PROSPECTIVE APPLICATIONS OF HYDROGENATED NANO-CRYSTALLINE Si FILMS

作　　者：刘宏[1] 何宇亮[2] 

机构地区：[1]苏州铁道师范学院物理系,苏州215009 [2]南京大学物理系,南京210093

出　　处：《物理》1999年第12期724-729,共6页Physics

基　　金：国家自然科学基金

摘　　要：文章通过对纳米硅薄膜结构组分的研究，从实验和理论上共同探讨了其低维量子特征，并由此提出其电输运机制及其可见发光机理．最后，综合纳米硅薄膜的各种新颖物性，展望了其在纳米电子学和ＭＥＭＳ（ 微机电系统） 领域内的应用前景．We review the low-dimenstional quantum characteristics of hydrogenated nano-crystalline silicon films in relation to their novel structure constitution, following which the mechanisms of electrical transport and visible light emission are described. Finally, we review the application prospects of these films in nano-electricity research and MEMS systems.

关 键 词：纳米硅薄膜 量子点 电子隧穿 

分 类 号：O484.1[理学—固体物理]