沉积电位对ZnO薄膜结构及光电性能的影响  

Influence of deposition potential on structure and optoelectronic properties of ZnO thin films

作　　者：孙兆奇[1] 徐凯[1] 杨蕾[1] 石市委[1] 张苗[1] 宋学萍[1] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039

出　　处：《安徽大学学报（自然科学版）》2013年第2期45-50,共6页Journal of Anhui University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(51272001;51072001);教育部留学归国人员中央部门专项基金资助项目

摘　　要：以硝酸锌溶液为电解液,采用电化学沉积方法,在导电玻璃(ITO)上制备ZnO薄膜.使用X射线衍射仪、扫描电子显微镜对制备的ZnO薄膜结构和形貌进行表征,并研究薄膜的光电性能.结果表明,通过该方法制备的ZnO具有标准的六方纤锌矿纳米柱状结构,沉积电位为-0.75、-0.80、-0.85 V时,制备的ZnO纳米柱的直径分别为250、400、500 nm,禁带宽度分别为3.12、3.27、3.29 eV,光电流密度分别为1.18、1.07、0.89μA.cm-2.ZnO thin films were prepared by cayhodic electrochemic deposition method on ITO substrate,the Zn（NO3）2 solution was used as electrolyte.The ZnO thin films were characterized by X-ray diffraction and scanning electron microscopy,the optoelectronic properties of ZnO thin films were studied.The results showed that the ZnO thin films were nanorod with wurtzite structure.When the deposition voltages were-0.75,-0.80,-0.85 V,the band gap and the photocurrent density of the ZnO thin films were 3.12,3.27,3.29 eV and 1.18,1.07,0.89 μA·cm-2,respectively.

关 键 词：ZNO薄膜 电沉积 沉积电位 禁带宽度 光电性能 

分 类 号：O484[理学—固体物理]