Al/ZnO:Al薄膜结构的荧光增强效应  

Emission Enhancement from Al-capped ZnO:Al Films

作　　者：徐天宁[1,2] 卢忠[1] 隋成华[1] 吴惠桢[2] 

机构地区：[1]浙江工业大学之江学院理学系,浙江杭州310024 [2]浙江大学物理系硅材料国家重点实验室,浙江杭州310027

出　　处：《发光学报》2013年第3期356-360,共5页Chinese Journal of Luminescence

基　　金：浙江省自然科学基金(Y1110549);浙江省教育厅科研项目(Y200803369)资助项目

摘　　要：利用物理气相沉积设备制备了Al/ZnO∶Al薄膜样品,研究了该薄膜结构的发光特性。结果表明,在ZnO∶Al薄膜表面镀一层Al岛薄膜可以增强其带边荧光,同时在475 nm附近产生蓝光峰。通过在Al岛薄膜和ZnO∶Al薄膜之间引入一层5 nm的Ta2O5绝缘层可以使ZnO∶Al薄膜的带边荧光和蓝光显著增强,并随着Ta2O5绝缘层厚度的增大而减弱。通过对Al/ZnO∶Al样品进行退火处理可以使带边荧光和蓝光峰分别增强9倍和83倍。基于局域表面等离子体共振理论,计算了Al/ZnO∶Al纳米结构的光学散射和吸收截面曲线。实验结果与理论计算相一致。Al/ZnO∶Al film structures were fabricated by physical vapor deposition,and the optical properties of which were studied.It was found that Al capped ZnO∶Al can enhance the band gap emission and generate blue emission（475 nm）.When a 5 nm Ta2O5 spacer was inserted between Al and ZnO∶Al,further enhancements were observed for both band gap and blue emission.The enhancement raito decreases with the thickness of the Ta2O5 spacer.Moreover,the band-edge emission and blue emission increase with annealing temperature and the max enhancement ratio is 9 and 83,respectively.According to localized surface plasmon resonance theory,the scattering and absorption cross sections of Al/ZnO∶Al were calculated.The theoretical results can interpret the experimental phenomena reasonably.

关 键 词：ZNO Al薄膜 局域表面等离子体 荧光增强 

分 类 号：O472.3[理学—半导体物理]