VDMOS参数一种新失效模式的调查与分析  

The Research and Analyses of a New Failure of VDMOS Parameters

作　　者：周桂丽[1] 

机构地区：[1]华越微电子有限公司,浙江绍兴312016

出　　处：《电子质量》2013年第4期34-40,共7页Electronics Quality

摘　　要：该文通过详细记录一种新的VDMOS失效模式,按调查过程,层层抽丝剥茧,从JEFT注入到N阱形成,通过对比几个相近失效模式,最后找出造成失效的真正原因,并对失效模式进行分析。A new failure mode of VDMOS was described in detail in this paper. In the course of the author＇s investigation,process flow from J-FET to N-plus formed will be analyzed significantly.By comparing with similar failure modes, the cause of failure was found at last.

关 键 词：JEFT注入 N阱 P阱 输出曲线 打胶 

分 类 号：TN386[电子电信—物理电子学]