硅基外延SrRuO_3/PbZr_(0.5)Ti_(0.5)O_3/SrRuO_3电容器的结构和性能研究  

Structure and Properties of Si Based Epitaxial SrRuO_3/PbZr_(0.5)Ti_(0.5)O_3/SrRuO_3 Capacitor

作　　者：朱慧娟[1] 刘保亭[1] 代秀红[1] 郭建新[1] 周阳[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2013年第3期428-431,451,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11074063);河北省应用基础研究计划重点项目(10963525D);高等学校博士点基金(20091301110002);河北省自然科学基金(E2011201092)

摘　　要：传统的方法很难直接在硅衬底上制备外延的氧化物铁电电容器,本实验采用生长在硅衬底上的外延SrTiO3为模板,直接生长了SrRuO3/PbZr0.5Ti0.5O3/SrRuO3电容器异质结,并对其结构及性能进行了研究。X射线衍射表明所制备的SrRuO3/PbZr0.5Ti0.5O3/SrRuO3异质结实现了在硅衬底上的外延生长。在5 V测试电压下,铁电电容器的剩余极化强度和矫顽电压分别为19.6μC/cm2和0.8 V。当极化翻转次数达到1010时,铁电电容器的极化强度没有明显的衰减,表明SrRuO3/PbZr0.5Ti0.5O3/SrRuO3电容器具有良好的抗疲劳性能。It is difficult to direcdy fabricate epitaxial oxide ferroelectric capacitor on Si substrate by traditional methods, SrRuO3/PbZr0.5 Ti0.5 O3/SrRuO3 capacitor was fabricated on the epitaxial SrTiO3 template which was grown on Si substrate. The X-ray diffraction spectra show that SrRuO3/PbZr0.5 Ti0.5 O3/SrRuO3 heterostructure is epitaxially grown on Si substrate. The remnant polarization and coercive voltage of the ferroelectric capacitor are 19.6 μC/cm2 and 0.8 V measured at 5 V, respectively. It is found that the polarization of ferroelectric capacitor do not show observable degradation up to 10^10 switching cycles, which indicating that SrRuO3/PbZr0.5 Ti0.5 O3/SrRuO3 ferroelectric capacitor possesses good fatigue-resist properties.

关 键 词：硅衬底 外延生长 SrRu03 PbZro5Ti0503 SrRu03异质结 

分 类 号：TM53[电气工程—电器]