区熔(FZ)硅单晶气相掺杂电阻率的理论计算  

Theoretical Calculation on Resistivity of Float-Zone Silicon Single Crystal Using Gas Doping

作　　者：曲翔[1,2] 陈海滨 方锋 汪丽都 周旗钢[1] 闫志瑞 

机构地区：[1]北京有色金属研究总院,北京100088 [2]有研半导体材料股份有限公司,北京100088 [3]国泰半导体材料有限公司,北京101300

出　　处：《人工晶体学报》2013年第3期456-460,共5页Journal of Synthetic Crystals

基　　金：硅材料设备应用工程(41091)

摘　　要：气相掺杂法因其简易灵活、生产周期短、成本较低的优点成为生产区熔硅单晶重要的辅助方法。本文根据区熔(FZ)硅单晶气相掺杂原理,结合单晶生长速度、单晶直径、气体流量、气体浓度、掺杂物的分凝、单晶对掺杂气体吸收率等一系列生长条件,进行理论计算并与实际生产相结合,进一步推算出掺杂量与电阻率关系的公式。通过该公式,可以更加准确控制气相掺杂硅单晶的电阻率,使理论计算与实际电阻率误差从20%降低到10%,从而降低生产成本。Gas doping method is an important auxiliary method of Float-Zone silicon single crystal due to its simple, flexible, d6ping technique, short production cycle, theoretical calculation investigated considering diameter and growth lower costs and so on. Based on the principle of the gas of relations between resistivity and doping quantity is rate of single silicon crystal, gas flowing and concentration, impurity segregation and absorption of doping gas by the crystal. A formula is gained which can more precisely control the resistivity of the crystal and decrease the error between theoretical calculation and the actual resistivity from 20% to 10% and thus, reduce the commercial cost of the doping process. Abstract： gas doping; Float-Zone single silicon crystal ; resistivity

关 键 词：气相掺杂 区熔硅单晶 电阻率 

分 类 号：O734[理学—晶体学]