UHVCVD SiGe外延设备真空腔室及自动传输系统设计  

Vacuum Chamber and Automatic Transfer System of UHVCVD for SiGe Epitaxial Growth

作　　者：王慧勇[1] 魏唯[1] 宁宗娥[1] 

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111

出　　处：《电子工业专用设备》2013年第4期9-11,33,共4页Equipment for Electronic Products Manufacturing

摘　　要：介绍了UHVCVD SiGe外延设备真空腔室及自动传输系统的具体设计,通过合理选取预备室和反应室的真空泵组,满足了设备的超高真空要求,自动传输系统则保证了反应室高洁净环境、提高外延生产效率。The design of vacuum chamber and wafer automatic transfer system of UHVCVD SiGe epitaxital growth equipment are presented in this paper. An ultra high vacuum can be achieved by correctly choose a group of vacuum pumps of the loadlock chamber and the reaction chamber. The automatic transfer system could ensure a very clean environment in the reaction chamber and improve the production efficiency of SiGe epitalxial growth.

关 键 词：自动传输系统 预备室 反应室 超高真空 

分 类 号：TN305[电子电信—物理电子学]