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作 者:高延敏[1] 杨志磊[1] 吕伟刚[1] 陶正章[1]
机构地区:[1]江苏科技大学材料科学与工程学院,江苏镇江212003
出 处:《江苏科技大学学报(自然科学版)》2013年第1期35-38,共4页Journal of Jiangsu University of Science and Technology:Natural Science Edition
摘 要:纳米TiO2半导体材料因为禁带隙较宽而存在对太阳能的利用率较低的问题一直影响自身发展.文中研究了不同掺杂组份和制备条件对TiO2薄膜光吸收性能的影响.首先通过正交实验设计出最优溶胶-凝胶实验方案,锡、锌、钛的元素摩尔比为1.0:0.5:10,pH值为2,制备出锐钛矿型TiO2薄膜.XRD和SEM分析表明SnO2,ZnO掺杂处理使TiO2的光吸收范围从紫外红移到可见光附近,降低其禁带宽度.在不改变TiO2晶型结构的情况下,通过改善TiO2结晶,细化晶粒,改变形貌特征等方式提高TiO2薄膜光吸收性能.The wide forbidden band gap has affected the development of TiO2 semiconductor materials,which leads to low utilization of solar energy.By co-doping Sn and Zn elements,the light absorption properties of TiO2 thin film will be improved effectively.The experiment scheme about the optimal sol-gel is put forward according to orthogonal design.The best anatase TiO2 thin film was prepared at the element molar ratio 1.0∶1.5∶10 of tin,zinc and titanium,with the pH value 2.Compared with pure TiO2,co-doped TiO2 had 85nm red shift and declined its band gap.Under the circumtance that SnO2 and ZnO have no effect on TiO2 structure,XRD and SEM analysis showed that changing the way of crystallization,graining refinement and changing morphology features and so on,would improve the light absorption properties of SnO2 and ZnO co-doped TiO2 thin film.
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