1.82-μm distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H_2 O sensing system  

作　　者：于红艳 潘教青 邵永波 王宝军 周代兵 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Chinese Optics Letters》2013年第3期41-44,共4页中国光学快报（英文版）

基　　金：supported by the National "863" Project of China(No.2012AA012203);the National "973" Program of China(No.2011CB301702)

摘　　要：High-strained InGaAs/InGaAsP multiple quantum wells （MQWs） distributed feedback （DFB） lasers, fab- ricated using metal organic chemical vapor deposition, are presented at 1,82 μm with a high side-mode- suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/℃, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be apt）lied to H2O concentration sensing.High-strained InGaAs/InGaAsP multiple quantum wells （MQWs） distributed feedback （DFB） lasers, fab- ricated using metal organic chemical vapor deposition, are presented at 1,82 μm with a high side-mode- suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/℃, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be apt）lied to H2O concentration sensing.

关 键 词：INGAAS WELL m distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H2 O sensing system DFB 

分 类 号：TN248[电子电信—物理电子学]