Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET  

作　　者：雷晓艺 刘红侠 张凯 张月 郑雪峰 马晓华 郝跃 

机构地区：[1]Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University [2]School of Technical Physics, Xidian University

出　　处：《Chinese Physics B》2013年第4期434-437,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006)

摘　　要：The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time （t）, channel width （W ）, channel length （L）, and stress voltage （Vd ） is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time （t）, channel width （W ）, channel length （L）, and stress voltage （Vd ） is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.

关 键 词：PMOSFETS hot carrier effect （HCE） DEGRADATION lifetime modeling 

分 类 号：TN386.1[电子电信—物理电子学]