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PMOSFETS: 作品数：27被引量：9H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：谭长华许铭真胡靖赵要张静更多>>; 相关机构：北京大学西安电子科技大学中国电子科技集团公司第二十四研究所电子科技大学更多>>; 相关期刊：《Chinese Physics Letters》《Chinese Physics C》《Journal of Semiconductors》《Science China(Information Sciences)》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划模拟集成电路国家重点实验室开放基金国家高技术研究发展计划更多>>

Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence: 《Science China(Information Sciences)》2022年第8期291-292,共2页Jingyi LIU Xia AN Gensong LI Zhexuan REN Ming LI Xing ZHANG Ru HUANG; supported by National Natural Science Foundation of China (Grant Nos. 61421005, 61927901, 61434007);111 Project (Grant No. B18001)。; Dear editor,Germanium(Ge) has been considered as a promising candidate of channel material for sub-7 nm owing to its high carrier mobility and good compatibility with conventional Si CMOS process [1]. Although Ge-base...; 关键词：meaningful EDITOR MASSIVE

A physical model of hole mobility for germanium-on-insulator pMOSFETs被引量：1: 《Journal of Semiconductors》2016年第4期50-56,共7页袁文宇徐静平刘璐黄勇程智翔; Project supported by the National Natural Science Foundation of China(Nos.61274112,61176100,61404055); A physical model of hole mobility for germanium-on-insulator p MOSFETs is built by analyzing all kinds of scattering mechanisms, and a good agreement of the simulated results with the experimental data is achieved, co...; 关键词：GeOI pMOSFETs hole mobility scattering mechanisms

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs: 《Chinese Physics C》2015年第9期90-96,共7页赵星郑中山李彬鸿高见头于芳; Supported by National Natural Science Foundation of China(61404169); The total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator （SOI） pMOSFETs have been studied by comparing them with those of the back transistor of SOI nMOSFETs fabricated on the ...; 关键词：SOI pMOSFET back transistor total dose radiation ANNEALING

A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs: 《Journal of Semiconductors》2015年第4期180-184,共5页冯帅赵利川张青竹杨鹏鹏唐兆云吴次南闫江; supported by the Institute of Microelectronics,Chinese Academy of Sciences; Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors （PMOSFETs） with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic par...; 关键词：implanted doping in situ doping TCAD simulation PMOSFETS

Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability被引量：1: 《Chinese Physics Letters》2014年第5期191-194,共4页王洪娟韩根全刘艳颜静张春福张进成郝跃; Supported by the Fundamental Research Funds for the Central Universities under Grant Nos 106112013CDJZR120015 and 106112013CDJZR120017, and the National Natural Science Foundation of China under Grant No 61334002.; We investigate negative bias temperature instability （NBTI） on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors （pMOSFETs） with low-temperature Si2H6 passivation. The Ge pMOSFETs e...

Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process: 《Chinese Physics Letters》2013年第8期156-159,共4页XU Gao-Bo XU Qiu-Xia YIN Hua-Xiang ZHOU Hua-Jie YANG Tao NIU Jie-Bin HE Xiao-Bin MENG Ling-Kuan YU Jia-Han LI Jun-Feng YAN Jiang ZHAO Chao CHEN Da-Peng; Supported by the Beijing Natural Science Foundation under Grant No 4123106;the Important National Science&Technology Specific Projects of China under Grant No 2009ZX02035.; We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors(PMOSFETs)with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process.In the process,SiO_(2)/poly-Si is adopted as the dummy ...; 关键词：DRAIN PMOSFETS PMOSFET

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET: 《Chinese Physics B》2013年第4期434-437,共4页雷晓艺刘红侠张凯张月郑雪峰马晓华郝跃; Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006); The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively...; 关键词：PMOSFETS hot carrier effect （HCE） DEGRADATION lifetime modeling

A physical-based pMOSFETs threshold voltage model including the STI stress effect: 《Journal of Semiconductors》2011年第5期57-61,共5页吴畏杜刚刘晓彦孙雷康晋峰韩汝琦; Project supported by the National Natural Science Foundation of China(No.60736030).; The physical threshold voltage model of pMOSFETs under shallow trench isolation （STI） stress has been developed. The model is verified by 130 nm technology layout dependent measurement data. The comparison between p...; 关键词：STI stress threshold voltage MOBILITY STRAIN

不同型号PMOSFETs的剂量率效应研究被引量：1: 《核技术》2010年第7期543-546,共4页兰博郭旗孙静崔江维李茂顺费武雄陈睿赵云; 对比研究了国内外五种不同型号的PMOSFETs,在不同剂量率、不同偏置条件下的辐照响应特性;并对高剂量率辐照后的器件进行了与低剂量率辐照等时的室温退火。结果表明,随着辐照累积剂量的增加,所有器件阈值电压的漂移都更加明显;不同型号...; 关键词：PMOSFETS 偏置剂量率时间相关效应低剂量率损伤增强效应

Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions被引量：1: 《Journal of Semiconductors》2010年第5期55-58,共4页兰博郭旗孙静崔江维李茂顺陈睿费武雄赵云; The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors （PMOSFETs） were investigated at various dose rates and biasing conditions.The results show that the shift ...; 关键词：PMOSFETS BIAS ELDRS TDE interface states oxide-trapped charge

PMOSFETS