Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions  

作　　者：兰博 郭旗 孙静 崔江维 李茂顺 陈睿 费武雄 赵云 

机构地区：[1]Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences [2]Xinjiang Key Laboratory of Electronic Information Materials and Devices [3]Graduate University of the Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2010年第5期55-58,共4页半导体学报（英文版）

摘　　要：The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors （PMOSFETs） were investigated at various dose rates and biasing conditions.The results show that the shift of threshold voltage is more obvious when the dose rate is decreased.Under the various dose rates and biasing conditions,some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity（ELDRS）.Finally,using the subthreshold-separating method,the threshold-voltage shift is separated into shifts due to interface states and oxidetrapped charges,and the underlying mechanisms of the observed effects are discussed.It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors （PMOSFETs） were investigated at various dose rates and biasing conditions.The results show that the shift of threshold voltage is more obvious when the dose rate is decreased.Under the various dose rates and biasing conditions,some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity（ELDRS）.Finally,using the subthreshold-separating method,the threshold-voltage shift is separated into shifts due to interface states and oxidetrapped charges,and the underlying mechanisms of the observed effects are discussed.It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.

关 键 词：PMOSFETS BIAS ELDRS TDE interface states oxide-trapped charge 

分 类 号：TN32[电子电信—物理电子学]