A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs  

作　　者：冯帅 赵利川 张青竹 杨鹏鹏 唐兆云 吴次南 闫江 

机构地区：[1]College of Big Data and Information Engineering,Guizhou University [2]Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第4期180-184,共5页半导体学报（英文版）

基　　金：supported by the Institute of Microelectronics,Chinese Academy of Sciences

摘　　要：Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors （PMOSFETs） with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic parameters acquired by TCAD simulation are compared with each other to analyze their electrical perfbrmance. The saturated driven currents of implanted doping devices with a 25 nm gate length （Lg） are about 200 ×μA/μm bigger than the in situ doping devices at the same saturated threshold voltage （Vtsat）. Meanwhile the drain-induced barrier lowering （DIBL） and saturated subthreshold swings for implanted doping devices are also 30 50 mV/V and 6.3-9.1 mV/dec smaller than those of in situ doping devices at 25 nm Lg and a 9-11 nm thickness of SOl （Tsi）, respectively. The shift of Vtsat with Tsi for in situ doping devices with 15 nm Lg is -31.8 mV/nm, whereas that for in situ doping devices is only -6.8 mV/nm. These outcomes indicate that the devices with implanted doping can produce a more advanced and stable electrical performance.Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors （PMOSFETs） with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic parameters acquired by TCAD simulation are compared with each other to analyze their electrical perfbrmance. The saturated driven currents of implanted doping devices with a 25 nm gate length （Lg） are about 200 ×μA/μm bigger than the in situ doping devices at the same saturated threshold voltage （Vtsat）. Meanwhile the drain-induced barrier lowering （DIBL） and saturated subthreshold swings for implanted doping devices are also 30 50 mV/V and 6.3-9.1 mV/dec smaller than those of in situ doping devices at 25 nm Lg and a 9-11 nm thickness of SOl （Tsi）, respectively. The shift of Vtsat with Tsi for in situ doping devices with 15 nm Lg is -31.8 mV/nm, whereas that for in situ doping devices is only -6.8 mV/nm. These outcomes indicate that the devices with implanted doping can produce a more advanced and stable electrical performance.

关 键 词：implanted doping in situ doping TCAD simulation PMOSFETS 

分 类 号：TN386[电子电信—物理电子学]