PZT厚膜与Si衬底互扩散阻挡层研究  

Study on Inter-Diffusion Barrier Layer between PZT Pyroelectric Thick Film and Si Substrate

作　　者：陈冲[1] 吴传贵[1] 彭强祥[1] 罗文博[1] 张万里[1] 王书安 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]四川汇源科技股份有限公司,四川成都610054

出　　处：《压电与声光》2013年第2期261-264,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(51102037)

摘　　要：在Pt/Ti/SiO2/Si基片上,利用电泳沉积制备PZT热释电厚膜材料。为防止Pb和Si互扩散,在Pt底电极与SiO2/Si衬底间通过直流磁控溅射制备了TiOx薄膜阻挡层。对具有0、300nm和500nm TiOx阻挡层的PZT厚膜材料用SEM和能量色散谱仪(EDS)表征了Pb和Si互扩散情况,用动态热释电系数测量仪测试了热释电系数。结果表明,当TiOx阻挡层为500nm时,可阻挡Pb和Si互扩散,热释电性能最好。热释电系数p=1.5×10-8 C.cm-2.K-1,相对介电常数εr=170,损耗角正切tanδ=0.02,探测度优值因子Fd=1.05×10-5Pa-0.5。PZT thick film as pyroelectric material has been prepared on the Pt/Ti/SiO2/Si substrate by using the electrophoresis deposition （EPD） method. In order to prevent the inter-diffusion between Pb and Si,a TiOx film bar- rier layer between Pt bottom electrode and SiO2/Si substrate has been prepared by using the DC magnetron sputte- ring method. The inter-diffusion between Pb and Si in PZT thick film material with TiOx barrier layer thickness of 0, 300 nm and 500 nm respectively have been characterized by SEM and EDS. The pyroelectric coefficient has been measured by the dynamic pyroeleetrie coefficient instrument. The results show that the inter-diffusion between Pb and Si can be blocked when the thickness of TiOx barrier layer is 500 nm and have the best pyroeleetric properties. The pyroeleetric coefficient, relative dielectric constant, dielectric loss and detectivity figure of merit are p=1.5×10^-8C·cm^-2K 1 ,εr=170,tan δ=0.02 and Fe=1. 05×10^-5Pa^-0.5 respectively.

关 键 词：锆钛酸铅(PZT)厚膜 直流磁控溅射 TiOx 热释电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]