用PECVD制备掺氟氧化硅低介电常数薄膜  

Preparation of Fluorine Doped Silicon Oxide Films by Using Plasma Enhanced Che mical Vapor Deposition

作　　者：王鹏飞[1] 丁士进[1] 张卫[1] 张剑云[1] 王季陶[1] 

机构地区：[1]复旦大学电子工程系,上海200433

出　　处：《微电子学》2000年第5期347-350,共4页Microelectronics

基　　金：国家自然科学基金资助!(项目编号 :6 9776 0 2 6 )

摘　　要：用 PECVD淀积了低介电常数的掺氟氧化硅介质薄膜 ,Si F4 的流量达到 60 sccm时 ,薄膜的相对介电常数可以降低到 3.2。对试样的 FTIR分析表明 ,薄膜中大部分的氟以 Si- F键形式存在。C- V特性测试表明 ,薄膜介电常数随氟含量的增加而减小 ,但薄膜的吸水性随氟含量的增加而变大。并进一步讨论了介电常数和薄膜稳定性与薄膜中氟原子含量之间的内在联系。Fluorine doped s ilicon oxide films are prepared using plasma enhanced chemical vapor deposition (PECVD) F doped silicon dioxide film with relative dielectric constant of 3 2 is deposited at an SiF 4 flow rate of 60 sccm With the increase of F contents in the film, the dielectric constant decreases The decrease of die lectric constant is more obvious when the flow rate of SiF 4 is small The wa ter resistant ability deteriorates with the increase of F concentration in the f ilm The mechanism of the decrease of dielectric constant in these films is inve stigated The relation between F concentration and the water resistant abilit y of the film is also discussed

关 键 词：化学气相淀积 掺氟氧化硅 低介电常数薄膜 

分 类 号：TN304.055[电子电信—物理电子学]