椭偏光谱及在离子注入硅损伤研究中的应用  

Spectroscopic Ellipsometry and Its Applications in the Study of Radiation Damage Formed by Ion Implantation into Si

作　　者：阳生红[1] 莫党[1] 

机构地区：[1]中山大学物理系,广州510275

出　　处：《半导体技术》2000年第5期33-37,共5页Semiconductor Technology

摘　　要：介绍了椭圆偏振光谱（SE）的原理，给出了椭偏仪在离子注入半导体的辐照损伤研究中的应用和局限。研究表明，结合其它分析手段并建立精细的椭偏模型。椭圆偏振光谱能定量测量各层结构的厚度、成分、气孔率和光学常数。Applied range and limits are given about spectroscopic ellipsometry (SE) in study of radiation damage formed by ion implantation into semiconductor. Combining with other analysis tools and establishing refined model, researchers have illustrated that SE can be used to determine quantitatively thickness, composition, porosity and optical constants of each layer. SE will play an active role in the study of radiation damage formed by ion implantation into semiconductors.

关 键 词：椭圆偏振光谱 离子注入 半导体 硅损伤 

分 类 号：TN305.3[电子电信—物理电子学]