半导体量子点的器件应用  

Device Applications of Semiconductor Quantum Dot

作　　者：王亚东[1] 黄靖云[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《半导体光电》2000年第5期310-313,共4页Semiconductor Optoelectronics

基　　金：浙江省科技计划资助项目

摘　　要：半导体量子点的生长和性质已成为当今研究的热点。以S -K生长模式已成功地生长了无缺陷的半导体量子点。由于其较强的量子效应 ,量子点结构的光电器件和电子器件有望比量子阱结构的器件具有更好的性能。介绍了量子点在光电器件和电子器件中的一些应用 ,包括单电子晶体管、激光器和红外探测器等。There is currently a major ongoing research effort across the world to grow and characterize semiconductor quantum dots(QDs). Defect-free QDs have be en successfully grown under what is known as the Stranski-Krastanov(S-K) grown m ode.Due to their stronger quantum-confined effects,quantum dot structures in o p toelectronic and electronic devices are expected to have superior device perform ance levels than quantum well structures.This paper introduces the applications of the quantum dots in optoelectronic and electronic devices including such opt oelectronic and electronic devices as single-electron transistors,lasers,and inf rared photodetectors.

关 键 词：半导体量子点 最子限制效应 光电器件 电子器件 

分 类 号：TN36[电子电信—物理电子学]