半导体微腔激光器阈值特性分析  

Analysis on Threshold Characteristics in Semicond uctor Microcavity Lasers

作　　者：吴根柱[1] 张宝顺[1] 曲轶 任大翠[1] 张兴德[1] 

机构地区：[1]长春光机学院高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《半导体光电》2000年第5期325-327,共3页Semiconductor Optoelectronics

基　　金：兵器预研项目!(CHGJ- 1998- )

摘　　要：利用速率方程理论讨论了半导体微腔激光器的激射阈值与自发发射耦合系数 β之间的关系 ,分析了降低阈值的途径 ,为器件设计提供了依据。The relations between lasing threshold a nd coupling coefficient β of spontaneous emission in semiconductor mic rocavity lasers are discussed on the basis of the theory of rate equations.The w ays to decrease threshold ,which provides the basis for devices design are also analyzed.

关 键 词：微腔激光器 速率方程 自发发射 半导体激光器 

分 类 号：TN248.4[电子电信—物理电子学]