驱动光束不均匀性研究中的硅平面薄膜  

THIN SILICON FOIL USED TO STUDY THE SPATIAL NONUNIFORMITY IN THE DRIVEN INTENSITY

作　　者：周斌[1] 韩明[2] 陆卫昌[1] 徐平[1] 赖珍荃[1] 沈军[1] 邓忠生[1] 吴广明[1] 张勤远[1] 陈玲燕[1] 王珏[1] 

机构地区：[1]同济大学波耳固体物理研究所,上海200092 [2]中科院上海冶金所,上海200050

出　　处：《强激光与粒子束》2000年第2期181-184,共4页High Power Laser and Particle Beams

基　　金：国家863惯性约束聚变领域资助!( 863 -4 16-3 -6.6);中物院外基金资助课题!(970 2 13 )

摘　　要：介绍以氧化、扩散、光刻等现代半导体技术结合化学腐蚀工艺实现对 Si片的定向自截止腐蚀 ,制备获得用于研究驱动光束不均匀性的自支撑 Si平面薄膜的工艺。通过台阶仪测量厚度在 3～ 4 μm的 Si平面薄膜 ,在扫描范围为 1 0 0 0 μm时 ,它的表面粗糙度为几十纳米 ;SEM测量表明 ,Si薄膜表面颗粒度在纳米量级 ;探讨了采用控制扩散、腐蚀参数和表面修饰处理来降低 Si膜表面粗糙度的方法。The preparation process of thin silicon foil used to study the spatial nonuniformity in the laser driven intensity was introduced. Oxidation, diffusion, photoetching process and etching technology were adopted to achieve thin silicon foil with a thickness of 3 to 4 micrometers. The surface roughness was about 10nm and the grain size of silicon foil was nanometer scale. The preparation parameters were studied to control the roughness of thin silicon foil.

关 键 词：ICF分解实验 驱动光束不均匀 硅平面薄膜 

分 类 号：O484.5[理学—固体物理]