用泵浦-探测方法研究ZnCdSe量子阱/CdSe量子点复合结构中的激子衰减  被引量:2

Exciton Decay in ZnCdSe QW/CdSe QD Using Femtosecond Pump-probe Measurement

在线阅读下载全文

作  者:张立功[1,2] 申德振[1,2] 王海宇 王希军[1,2] 范希武 

机构地区:[1]中国科学院激发态物理开放研究实验室,吉林长春130021 [2]中国科学院长春光学精密机械与物理研究所,吉林长春130021

出  处:《发光学报》2000年第2期85-89,共5页Chinese Journal of Luminescence

基  金:国家攀登计划项目;国家863高技术计划项目;国家自然科学重大基金项目;国家自然科学基金项目(No.69886003,69877019);中国科学院激发态物理开放实验室的资助

摘  要:用飞秒泵浦-探测方法测量了ZnCdse量子阱/ZnSe/CdSe量子点复合结构样品的透射特性。样品中ZnSe垒层厚度为 15nm,泵浦一探测结果得到上升沿时间为 367±60fs,下降沿时间为1.3±0.2ps。获得ZnCdSe量子阱中激子寿命约为1ps。The transmission intensity of ZnCdSe quantum well / CdSe quantum dot combination structure vs delay time is investigated using femto-second pump-probe measurement. Femto-second pulse with pulse width 130fs and wavelength 537um utilized as pump and probe pulse in the pump-probe measurement is yielded using locking mode Ti: sappire femto-second laser (Spectra-physics laser Co. ) and tuned by OPA-800. The transmission intensity of probe pulse vs the delay time between pump pulse and probe pulse is detected using multiplier phototube. The structure of experimental sample is ZnSe buffer / 7um ZnCdSe(QW) / 15um ZnSe barrier / 10um CdSe (QD)/ ZnSe. ZnSe, ZnCdSe and CdSe were grown on GaAs substrate by molecular beam epitaxy, and then the GaAs substrate is eroded by corrosive. The absorption peak of exciton in ZnCdSe quantum well of experimental sample is located at 528um. The transmission intensity characteristic with the delay time of probe pulse is shown in Fig. 4. On the basis of the condition of experiment, we consider the rise-time of turn-on side is primarily determined by pump pulse lineshape and the down time of turn-off side is donated from exciton decay in ZnCdSe quantum well. Fitting the data of pump-probe experiment, the rising time of 367 ±60fs and the down-time of 1. 3±0. 2ps are obtained. Extracting the donation of pulse lineshape in down-time, the exciton decay time is 1ps calculated from turn - off side of the pump-probe transmission curve.

关 键 词:ZnCdSe量子阱 CDSE量子点 激子 泵浦-探测 

分 类 号:O472.3[理学—半导体物理] TN304.25[理学—物理]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象