原子氢辅助分子束外延生长对GaAs材料性能的改善  

THE IMPROVEMET CHARACTERISTICS OF HOMOEPI-TAXIAL GaAs GROWN BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY

作　　者：王海龙[1] 朱海军[1] 宁东[1] 汪辉[1] 王晓东[1] 郭忠圣[1] 封松林[1] 

机构地区：[1]中国科学院半导体,半导体超晶格国家重点实验室,北京100083

出　　处：《红外与毫米波学报》2000年第3期191-193,共3页Journal of Infrared and Millimeter Waves

基　　金：国家攀登计划;国家自然科学基金!(编号 697760 1 6和 1 982 30 0 1 )资助项目&&

摘　　要：利用深能级瞬态谱 (DL TS)研究了常规分子束外延和原子氢辅助分子束外延生长的掺杂 Si和 Be的 Ga As同质结构样品中缺陷的电学特性 .发现原子氢辅助分子束外延生长的样品中缺陷的浓度与常规分子束外延生长的样品相比有明显的降低 。The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen assisted MBE (H MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H MBE compared to that grwon by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth.The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices.

关 键 词：原子氢辅助分子束外延生长 砷化镓 DLTS 

分 类 号：TN304.23[电子电信—物理电子学]