Effects of NH_3 annealing on interface and electrical properties of Gd-doped HfO_2/Si stack  

作　　者：杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌 

机构地区：[1]Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals [2]National Engineering Research Center for Semiconductor Materials,General Research Institute for Nonferrous Metals

出　　处：《Journal of Rare Earths》2013年第4期395-399,共5页稀土学报（英文版）

基　　金：supported by National Natural Science Foundation of China (50932001);National Natural Science Foundation of China (51102020,51202013);National Science and Technology Major Project(2009ZX02039-005)

摘　　要：Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.

关 键 词：Gd-doped HfO2 HIGH-K NH3 annealing INTERFACE electrical properties rare earths 

分 类 号：TG156.2[金属学及工艺—热处理]