GGNMOS叉指宽度与金属布线对ESD防护性能的影响  

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

作　　者：梁海莲[1,2] 董树荣[2] 顾晓峰[1] 李明亮[2] 韩雁[2] 

机构地区：[1]轻工过程先进控制教育部重点实验室,江南大学电子工程系,江苏无锡214122 [2]浙江大学微电子与光电子研究所,杭州310027

出　　处：《固体电子学研究与进展》2013年第2期194-198,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(11074280;61171038;61150110485);江苏高校优势学科建设工程资助项目(PAPD);中央高校基本科研业务费专项资金资助项目(JUDCF12027;JUDCF12032)

摘　　要：栅接地NMOS(GGNMOS)器件具有与CMOS工艺兼容的制造优势,广泛用于静电放电(ESD)保护。鉴于目前GGNMOS的叉指宽度、叉指数及金属布线方式等外部因素对ESD鲁棒性的影响研究较少,设计了不同的实验对此开展对比分析。首先,基于0.5μm Bipolar-CMOS-DMOS(BCD)工艺设计并制备了一系列GGNMOS待测器件;其次,通过传输线脉冲测试,分析了叉指宽度与叉指数对GGNMOS器件ESD失效电流(It2)的影响,结果表明,在固定总宽度下适当减小叉指宽度有利于提高It2;最后,比较了平行式与交错式两种金属布线方案对It2的影响,结果表明,平行式金属布线下GGNMOS器件的ESD鲁棒性更好。Gate-grounded NMOS （GGNMOS） devices have been widely used for electrostatic discharge （ESD） protection due to their manufacturing compatibility with CMOS process. How- ever, relatively little research has been done for the effects of finger width, number of fingers and metal routing methods of GGNMOS on the ESD protection robustness. Experiments are thus de- signed to investigate the effects of these external factors by comparison. First, different GGN- MOS devices are designed and fabricated based on the 0.5 μm Bipolar-CMOS-DMOS （BCD） pro- tess. Then, transmission line pulse testing is performed to analyze the effects of finger width and finger number on the ESD failure current （It2）. The results indicate that for GGNMOS devices of fixed total width, decreasing the width of single finger reasonably helps to increase 1,2. Finally, the effects of the parallel and cross-patterned metal routing methods on the ESD failure current are investigated. The results suggest that GGNMOS devices with parallel metal routing have a better ESD robustness.

关 键 词：栅接地N型金属氧化物半导体场效应晶体管 静电放电 双极型-互补型金属氧化物半导体-双扩散金属氧化物半导体工艺 叉指 金属布线 失效电流 

分 类 号：TN306[电子电信—物理电子学]