射频磁控溅射法制备硼薄膜  

Preparation of Boron Film by RF-magnetron Sputtering

作　　者：刘玉杰[1] 胡艳[1] 杨程[1] 叶迎华[1] 沈瑞琪[1] 李创新[1] 

机构地区：[1]南京理工大学化工学院,江苏南京210094

出　　处：《火工品》2013年第1期5-9,共5页Initiators & Pyrotechnics

摘　　要：采用射频(RF)磁控溅射技术在单晶硅(Si)基底上制备了硼(B)薄膜,研究了工作气压和溅射功率对薄膜沉积速率及薄膜质量的影响,并对薄膜的微观形貌和组成成分进行了表征。结果表明:当气压为0.3Pa时,B薄膜的沉积速率最大;沉积速率随溅射功率的增大而增大;在0.3Pa、150W条件下制备的B薄膜比较平整、均匀、致密;B薄膜的主要构成为晶态的B,存在少量的B2O3。Boron film was successfully deposited on the substrate of silicon by means of RF-magnetron sputtering process. The effects of sputtering power and sputtering pressure on the deposition rate and the quality of films were studied, and the morphology and composition of B film were investigated. The results showed that the deposition rate of B film came to a peak value at the pressure 0.3Pa, and increased almost linearly with the increasing sputtering power. The B film was smooth, uniformly and compact under the condition of 150W sputtering power and 0.3Pa pressure, and the B film mainly consist of elementary-crystal B, while a little B2O3 exist.

关 键 词：硼薄膜 射频磁控溅射 制备 形貌表征 成分分析 

分 类 号：TJ450.4[兵器科学与技术—火炮、自动武器与弹药工程]