质子注入和快速退火对GaAs/AlGaAs量子阱红外探测器的影响  

INFLUENCE ON GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR OF PROTON IMPLAN TATION AND RAPID THERMAL ANNEALING

作　　者：李娜[1] 陆卫[1] 李宁[1] 刘兴权[1] 袁先漳[1] 窦红飞[1] 沈学础[1] FU Lan Tan H H C Jagadish M B Johnston M Gal 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083 [2]Department of Electronic Materials Engineering,The Research School of Physical Sciences and Engineering,The Australian National University [3]School of Physics,The University of New South Wales

出　　处：《红外与毫米波学报》2000年第1期25-28,共4页Journal of Infrared and Millimeter Waves

摘　　要：利用质子注入和快速退火技术改变GaAs/AlGaAs量子阱能级分布,使量子阱红外探测器的光电特性发生变化,在较大地移动了探测波长的同时,探测器的响应率、探测率以及暗电流特性也发生相应变化.在质子注入剂量为2.5×1015cm-2、快速退火条件为950℃、30s时,峰值探测波长移动2μm.The use of intermixing technique was demonstrated in modification of energy level distribution of GaAs/AlGaAs quantum wells. A large response wavelength shift was achieved by the proton implantation followed by standard annealing procedures (950℃for 30s). The PL and photoresponse spectra were measured as a function of ion dose in the range from 5×10 14 cm 2 to 2.5×10 15 cm 2 ,the peak photoresponse wavelength was tunable between 8.4μm to 10.2μm for the infrared and the PL peak for the related material changed from 1.62eV to 1.645eV. The influence on responsivity and dark current was analyzed.

关 键 词：质子注入 快速退火 量子阱红外探测器 

分 类 号：TN215[电子电信—物理电子学]