不同偏压下Zn_(1-x)Cd_xSe-ZnSe超晶格室温电调制反射谱研究  

Bias Dependence of Electroreflectance Spectra of Zn_(1-x)Cd_xSe/ZnSe Supperlattices at Room Temperature

作　　者：于广辉[1] 范希武[1] 关郑平 杨春雷 张吉英[1] 申德振[1] 胡德宝[2] 

机构地区：[1]中国科学院长春物理研究所,吉林长春130021 [2]吉林大学电子工程系,吉林长春130023

出　　处：《发光学报》2000年第1期1-5,共5页Chinese Journal of Luminescence

基　　金：国家攀登计划;国家自然科学重大基金!( N o.698962 60 );国家自然科学基金!( No. 5 9772 0 3 6;N o.698860 0 3 ;No.699770 19)

摘　　要：首次研究了在室温和不同直流偏压下 Zn1-x Cdx Se -Zn Se超晶格结构的电调制反射谱 ( ER)的变化。当器件处于弱场范围时 ,随着电场的增加 ,ER谱的信号幅度增加 ,而线型不变 ;在强场区 ,随着电场的增加 ,ER谱的线型发生变化 ,激子跃迁能量红移 ,继续增加反向偏压出现来自于 1 c-2 hh的禁戒跃迁 ,且其强度随反向偏压的增加迅速增加。不同偏压下组合超晶格结构的 ER谱研究表明 ,势垒高度较低的超晶格结构中的激子较易受到电场的调制。semiconductor heterostructures have been extensively studied in the past several years due to their potential applications in blue and blue green optoelectronic devices. The use of these structures in light emission diode and laser diode requires the applications of an electric field to provide carriers for recombination based optical processes. But the existence of electric field also influences the optical properties of these structures. In this paper, the investigation of the effect of electric field on the electro modulated reflectance (ER)spectra energy and intensity of ZnCdSe ZnSe superlattices was described. The variation of ER spectra under different bias at room temperature is studied for the first time. In the range of the weak electric field, the intensity of the ER spectra increase with increasing the electric field, but the lineshape is almost not affected. In the range of strong electric field, the lineshape of the ER spectra vary with increasing the electric field, and the transition energy shows a red shift. The forbidden transition emerges under certain field intensity, and its intensity increases quickly with increasing the field intensity, these effects are attributed to the quantum confined stark effect (QCSE). The ER spectra of compound superlattice with different potential barrier heights under different bias voltages indicate that the excitons are more easily affected than the superlattice with lower confining energy. The results are useful for the design of ZnSe/based optoelectronic devices.

关 键 词：超晶格 电调制反射谱 电光调制 半导体 

分 类 号：O472[理学—半导体物理] TN304.26[理学—物理]