BCN三元化合物的简单生长模型  

A SIMPLE GROWTH MODEL OF TERNARY BCN COMPOUNDS

作　　者：唐璧玉[1] 杨国伟[1] 任志昂[1] 蔡孟秋[1] 

机构地区：[1]湘潭大学物理系,湘潭411105

出　　处：《物理学报》2000年第3期518-521,共4页Acta Physica Sinica

摘　　要：提出了BCN三元化合物生长的简单模型.结果表明:元素的表面覆盖率、总体生长率、N元素的生长率和化合物中含N量由N流量与B和C流量和之比决定,且总体生长率存在最大值.在N流量与B和C流量和之比为定值时,B和C的流量比对此影响甚小。A Simple growth model of ternary BCN compound is proposed in this paper.It was shown that surface coverage of radicals and growth rate of the compounds,incorporation rate and bulk concentration of element N are determined mainly by the ratio of N flux to the total flux of elements B and C,and a maximum growth rate is expected.For a fixed ratio of N flux to the total flux of elements B and C,the flux ratio of element B to C has little influence on the total growth rate,but it determines deposition rate and bulk concentration of elements B and C.

关 键 词：BCN三元化合物 简单生长模型 沉积 结构 

分 类 号：O471[理学—半导体物理]